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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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HDTMOSTM Single N-Channel Field Effect Transistor
Medium Power Surface Mount Products
These medium power SOT-223 devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These surface mount MOSFETs feature low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. SOT-223 HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in peripheral products such as printers and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * * * * * * * * Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive -- Can Be Driven by Logic ICs SOT-223 Saves Board Space and Height Diode Is Characterized for Use In Bridge Circuits IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for SOT-223 Package Provided Use MMFT5N02HDT1 to order the 7 inch/1000 unit reel Use MMFT5N02HDT3 to order the 13 inch/4000 unit reel
MMFT6N03HD
TM
TMOS POWER FET 6.0 AMPERES 30 VOLTS RDS(on) = 0.050 OHM
D 4 G S CASE 318E-04, Style 3 TO-261AA 1 2 3
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage - Continuous Drain Current - Continuous(1) Drain Current - Continuous @ 100C(1) Drain Current - Single Pulse (tp 10 s)(1) Total PD @ TA = 25C(1) Total PD @ TA = 25C(2) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 72 mH) Thermal Resistance - Junction to Ambient(1) - Junction to Ambient(2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When mounted on 1" sq. Drain pad on FR-4 bd material (2) When mounted on minimum recommended Drain pad on FR-4 bd material
This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Symbol VDSS VDGR VGS ID ID IDM PD TJ, Tstg EAS
Value 30 30 20 6.0 3.7 40 1.8 0.8 - 55 to 150 1300
Unit Vdc Vdc Vdc Adc Apk Watts C mJ C/W
RJA RJA TL
70 156 260 C
(c) Motorola TMOS Motorola, Inc. 1996
Power MOSFET Transistor Device Data
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MMFT6N03HD
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 5.5 Adc) (VGS = 4.5 Vdc, ID = 4.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 5.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge ( (VDS = 24 Vd , ID = 6 0 Ad , Vdc, 6.0 Adc, VGS = 10 Vdc) Vdc, 6.0 Adc, (VDD = 15 Vd ID = 6 0 Ad VGS = 10 Vdc Vdc, RG = 6.0 ) ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (1) (IS = 6.0 Adc, VGS = 0 Vdc) (IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125C) VSD -- -- trr ( (IS = 6 0 Ad , VGS = 0 Vdc, 6.0 Adc, Vd , dIS/dt = 100 A/s) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. ta tb QRR -- -- -- -- 0.92 0.80 28 13 15 0.020 1.2 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 6.0 21 25 30 15 2.0 4.3 4.3 15 40 50 60 30 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss -- -- -- 420 190 65 -- -- -- pF VGS(th) 1.0 RDS(on) -- -- gFS 6.0 0.040 0.053 9.5 0.050 0.060 -- mhos 1.5 2.0 Ohm Vdc V(BR)DSS 30 IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- -- Adc Vdc Symbol Min Typ Max Unit
Reverse Recovery Time
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Motorola TMOS Power MOSFET Transistor Device Data
MMFT6N03HD
PACKAGE DIMENSIONS
A F
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
S
1 2 3
B
D L G J C 0.08 (0003) H M K
INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4.
MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
GATE DRAIN SOURCE DRAIN
CASE 318E-04 ISSUE H
Motorola TMOS Power MOSFET Transistor Device Data
3
MMFT6N03HD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
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MMFT6N03HD/D Motorola TMOS Power MOSFET Transistor Device Data
*MMFT6N03HD/D*

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